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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D302
PMEM4020PD PNP transistor/Schottky-diode module
Product specification 2003 Nov 24
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
FEATURES * 600 mW total power dissipation * High current capability * Reduces required PCB area * Reduced pick and place costs * Small plastic SMD package. Transistor * Low collector-emitter saturation voltage. Diode * Ultra high-speed switching * Very low forward voltage * Guard ring protected. APPLICATIONS * DC-to-DC converters * Inductive load drivers * General purpose load drivers * Reverse polarity protection circuits. DESCRIPTION Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. NPN complement: PMEM4020ND. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEM4020PD - DESCRIPTION plastic surface mounted package; 6 leads
Marking code: B7.
handbook, halfpage 6
PMEM4020PD
PINNING PIN 1 2 3 4 5 6 emitter not connected cathode anode base collector DESCRIPTION
5
4
4 5 1 3 6
1
2
3
MGU868
Fig.1
Simplified outline (SOT457) and symbol.
VERSION SOT457
2003 Nov 24
2
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PNP transistor VCBO VCEO VEBO IC collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) open emitter open base open collector note 1 note 2 note 3 Ts 55 C; note 4 ICM IBM Ptot peak collector current peak base current total power dissipation Tamb 25 C; note 1 Tamb 25 C; note 2 Tamb 25 C; note 3 Ts 55 C; note 4 Tj VR IF IFSM Ptot junction temperature Schottky barrier diode continuous reverse voltage continuous forward current non-repetitive peak forward current total power dissipation t = 8.3 ms half sinewave; JEDEC method Tamb 25 C; note 1 Tamb 25 C; note 2 Tamb 25 C; note 3 Ts 55 C; note 4 Tj Ptot Tstg Tamb Notes junction temperature note 2 Tamb = 25 C; note 2 note 2 Combined device total power dissipation storage temperature operating ambient temperature - -65 -65 - - - - - - - - - - - - - - - - - - - - - - PARAMETER CONDITIONS
PMEM4020PD
MIN.
MAX. -40 -40 -5 -0.75 -1 -1.3 -2 -3 -1 295 400 500 1000 150
UNIT
V V V A A A A A A mW mW mW mW C V A A mW mW mW mW C mW C C
20 1 5 295 400 500 1000 150
600 +150 +150
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT457. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pads for collector and cathode both 1 cm2. 3. Mounted on a ceramic printed-circuit board; single-sided copper; tinplated; standard footprint. 4. Solder point of collector or cathode tab.
2003 Nov 24
3
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
THERMAL CHARACTERISTICS SYMBOL Single device Rth(j-s) Rth(j-a) thermal resistance from junction to solder point thermal resistance from junction to ambient in free air; notes 1 and 2 in free air; notes 1 and 3 in free air; notes 1 and 4 in free air; notes 1 and 5 Combined device Rth(j-a) Notes thermal resistance from junction to ambient in free air; notes 1 and 3 PARAMETER CONDITIONS
PMEM4020PD
VALUE
UNIT
95 250 315 425
K/W K/W K/W K/W
208
K/W
1. For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF (AV) rating will be available on request. 2. Solder point of collector or cathode tab. 3. Device mounted on a ceramic printed-circuit board; single-sided copper; tinplated; standard footprint. 4. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector and cathode both 1 cm2. 5. Device mounted on a FR4 printed-circuit board, single-sided copper; tinplated; standard footprint for SOT457.
2003 Nov 24
4
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL PNP transistor ICBO ICEO IEBO hFE collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current current gain (DC) VCB = -40 V; IE = 0 VCE = -30 V; IB = 0 VEB = -5 V; IC = 0 VCE = -5 V; IC = -1 mA VCE = -5 V; IC = -100 mA VCE = -5 V; IC = -500 mA VCE = -5 V; IC = -1 A VCE = -5 V; IC = -2 A; note 1 VCEsat collector-emitter saturation voltage IC = -100 mA; IB = -1 mA IC = -500 mA; IB = -50 mA IC = -1 A; IB = -100 mA IC = -2 A; IB = -200 mA VBEsat RCEsat VBEon fT base-emitter saturation voltage equivalent on-resistance base-emitter turn-on voltage transition frequency IC = -1 A; IB = -50 mA IC = -1 A; IB = -100 mA; note 1 VCE = -5 V; IC = -1 A IC = -50 mA; VCE = -10 V; f = 100 MHz - - - 300 300 250 160 50 - - - - - - - 150 PARAMETER CONDITIONS MIN.
PMEM4020PD
TYP. - - - - - - - - - - - - - - 180 - -
MAX. -100 -50 -100 -100 - 800 - - - -120 -145 -260 -530 -1.1 280 -1 -
UNIT
nA A nA nA
VCB = -40 V; IE = 0; Tamb = 150 C -
mV mV mV mV V m V MHz
Schottky barrier diode VF continuous forward voltage see Fig.2; note 1 IF = 10 mA IF = 100 mA IF = 1000 mA IR reverse current see Fig.3; note 1 VR = 5 V VR = 8 V VR = 15 V Cd Note 1. Pulse test: tp 300 s; 0.02. diode capacitance VR = 5 V; f = 1 MHz; see Fig.4 - - - - 5 7 10 19 10 20 50 25 A A A pF - - - 240 300 480 270 350 550 mV mV mV
2003 Nov 24
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Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
GRAPHICAL DATA
103 handbook, halfpage IF (mA) 102
MLE230
PMEM4020PD
105 handbook, halfpage IR (A)
(1)
MHC312
104
103
(2)
(1)
(2)
(3)
102
(3)
10
10
1
0
100
200
300
400 500 VF (mV)
1
0
5
10
15
20 VR (V)
25
Schottky barrier diode. (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
Schottky barrier diode. (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
Fig.2
Forward current as a function of forward voltage; typical values.
Fig.3
Reverse current as a function of reverse voltage; typical values.
handbook, halfpage
80
MHC313
handbook, halfpage
1200
MHC088
Cd (pF) 60
hFE 1000
(1)
800
40
600
(2)
400 20 200
(3)
0 0 5 10 15 VR (V) 20
0 -10-1
-1
-10
-102
-103 -104 IC (mA)
Schottky barrier diode; f = 1 MHz; Tamb = 25 C.
PNP transistor; VCE = -5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
Fig.4
Diode capacitance as a function of reverse voltage; typical values.
Fig.5
DC current gain as a function of collector current; typical values.
2003 Nov 24
6
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
PMEM4020PD
handbook, halfpage
-10
MHC089
-103 handbook, halfpage VCEsat (mV) -102
MHC090
VBE (V)
-1
(1) (2)
(1)
-10
(3) (2) (3)
-10-1 -10-1
-1
-10
-102
-103 -104 IC (mA)
-1 -1
-10
-102
-103
IC (mA)
-104
PNP transistor; VCE = -5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
PNP transistor; IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
Fig.6
Base-emitter voltage as a function of collector current; typical values.
Fig.7
Collector-emitter saturation voltage as a function of collector current; typical values.
102 handbook, halfpage RCEsat ()
MHC091
handbook, halfpage
300 fT (MHz) 250
MHC092
10
200
150
1
(1)
100
50
(2) (3)
10-1 -10-1
-1
-10
-102
-103 -104 IC (mA)
0 0
-200
-400
-600
-800 -1000 IC (mA)
PNP transistor; IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
PNP transistor; VCE = -10 V.
Fig.8
Equivalent on-resistance as a function of collector current; typical values.
Fig.9
Transition frequency as a function of collector current.
2003 Nov 24
7
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
APPLICATION INFORMATION
PMEM4020PD
handbook, halfpage handbook, halfpage
Vin
Vout IN
VCC
CONTROLLER
MGU866 MGU867
Fig.10 DC-to-DC converter.
Fig.11 Inductive load driver (relays, motors, buzzers) with free-wheeling diode.
2003 Nov 24
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Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
PACKAGE OUTLINE Plastic surface mounted package; 6 leads
PMEM4020PD
SOT457
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A A1 c
1
2
3
Lp
e
bp
wM B detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT457
REFERENCES IEC JEDEC EIAJ SC-74
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 01-05-04
2003 Nov 24
9
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
PMEM4020PD
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 Nov 24
10
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/01/pp11
Date of release: 2003
Nov 24
Document order number:
9397 750 11907

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